Details

Autor(en) / Beteiligte

• Plecenik, T.
• Tomášek, M.
• Belogolovskii, M.
• Truchly, M.
• Gregor, M.
• Noskovič, J.
• Zahoran, M.
• Roch, T.
• Boylo, I.
• Španková, M.
• Chromik, Š.
• Kúš, P.
• Plecenik, A.

Titel

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Ist Teil von

• Journal of applied physics, 2012-03, Vol.111 (5), p.056106-056106-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented YBa 2 Cu 3 O 6+c (YBCO) thin films with different crystallographic orientation have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.