Details

Autor(en) / Beteiligte

• Woo, Jong-Chang
• Chun, Yoon-Soo
• Joo, Young-Hee
• Kim, Chang-Il

Titel

Low leakage current in metal-insulator-metal capacitors of structural Al2O3/TiO2/Al2O3 dielectrics

Ist Teil von

• Applied physics letters, 2012-02, Vol.100 (8)

Erscheinungsjahr

2012

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Metal–insulator–metal (MIM) capacitors with Al2O3/TiO2/Al2O3 (ATA) dielectrics were fabricated and investigated. At 0 V and frequencies of 100 kHz and 1 MHz, the MIM capacitors with ATA (3/20/3 nm) and ATA (6/20/6 nm) thin films had low leakage current densities of approximately 5.2 × 10−13 and 1.5 × 10−13 A/cm2, respectively, and high capacitance densities of ∼19.48 and ∼20.13 fF/μm2, respectively. The frequency dispersion effect for these MIM capacitors was very small. The electrical transport mechanism, which is the device conduction mechanism, was determined for the varying structures of MIM capacitors.