Details

Autor(en) / Beteiligte

• Barraud, Sylvain

Titel

Dissipative quantum transport in silicon nanowires based on Wigner transport equation

Ist Teil von

• Journal of applied physics, 2011-11, Vol.110 (9), p.093710-093710-8

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2011

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• In this work, we present a one-dimensional model of quantum electron transport for silicon nanowire transistor that makes use of the Wigner function formalism and that takes into account the carrier scattering. Effect of scattering on the current-voltage (I-V) characteristics is assessed using both the relaxation time approximation and the Boltzmann collision operator. Similarly to the classical transport theory, the scattering mechanisms are included in the Wigner formulation through the addition of a collision term in the Liouville equation. As compared to the relaxation time, the Boltzmann collision operator approach is considered to be more realistic because it provides a better description of the scattering events. Within the Fermi golden rule approximation, the standard collision term is described for both acoustic phonon and surface-roughness interactions. It is introduced in the discretized version of the Liouville equation to obtain the Wigner distribution function and the current density. The model is then applied to study the impact of each scattering mechanism on short-channel electrical performance of silicon nanowire transistors for different gate lengths and nanowire widths.