Details

Autor(en) / Beteiligte

• Borselli, M. G.
• Eng, K.
• Croke, E. T.
• Maune, B. M.
• Huang, B.
• Ross, R. S.
• Kiselev, A. A.
• Deelman, P. W.
• Alvarado-Rodriguez, I.
• Schmitz, A. E.
• Sokolich, M.
• Holabird, K. S.
• Hazard, T. M.
• Gyure, M. F.
• Hunter, A. T.

Titel

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Ist Teil von

• Applied physics letters, 2011-08, Vol.99 (6), p.063109-063109-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2011

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.