Details

Autor(en) / Beteiligte

• Imhof, Sebastian
• Wagner, Christian
• Thränhardt, Angela
• Chernikov, Alexej
• Koch, Martin
• Köster, Niko S
• Chatterjee, Sangam
• Koch, Stephan W
• Rubel, Oleg
• Lu, Xianfeng
• Johnson, Shane R
• Beaton, Daniel A
• Tiedje, Thomas

Titel

Luminescence dynamics in Ga(AsBi)

Ist Teil von

• Applied physics letters, 2011-04, Vol.98 (16), p.161104-161104-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The temporal evolution of the spectrally resolved luminescence is measured for a Ga(AsBi) sample at low temperatures. The results are analyzed with the help of kinetic Monte Carlo simulations incorporating two disorder scales attributed to alloy disorder and Bi- clustering. An average time of 5 ps is identified as the upper limit for carrier capture into the Bi clusters whereas the extracted hopping rate associated with alloy fluctuations is much faster than the transitions between the individual cluster sites.