Details

Autor(en) / Beteiligte

• MANN, R. W
• CLEVENGER, L. A
• HONG, Q. Z

Titel

The C49 to C54-TiSi2 transformation in self-aligned silicide applications

Ist Teil von

• Journal of applied physics, 1993-04, Vol.73 (7), p.3566-3568

Ort / Verlag

Woodbury, NY: American Institute of Physics

Erscheinungsjahr

1993

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We show that when processing conditions closely mimic those used in the conventional self-aligned silicide process, the effective activation energy for the polymorphic phase transformation of orthorhombic base-centered (oC12) C49-TiSi2 to the low-resistivity orthorhombic face-centered (oF24) C54-TiSi2 phase is over 1 eV higher than previously reported literature values where a 1-step heat cycle was used. For C49-TiSi2 films formed at temperatures of 600 and 625 °C on (100) single crystal silicon substrates, the activation energy was determined to be 5.6±0.3 and 5.7±0.13 eV, respectively, for the transformation of this phase into C54-TiSi2 in the temperature range of 625–700 °C. The higher activation energy obtained with the simulation of the self-aligned silicide processing conditions suggests that the conventional processing may need to be modified for future semiconductor applications.