Details

Autor(en) / Beteiligte

• Cláudio de Carvalho, Luiz
• Schleife, André
• Fuchs, Frank
• Bechstedt, Friedhelm

Titel

Valence-band splittings in cubic and hexagonal AlN, GaN, and InN

Ist Teil von

• Applied physics letters, 2010-12, Vol.97 (23), p.232101-232101-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Modern parameter-free band-structure calculations are applied to the uppermost valence bands near the Γ point. They are based on a nonlocal exchange-correlation starting point for the iteration of the quasiparticle equation and include spin-orbit interaction. The Ga 3 d and In 4 d electrons remarkably influence the valence-band splittings. Quasiparticle effects shrink the crystal-field splitting Δ cf for GaN and increase the inverted Γ 1 − Γ 5 distance for AlN. Beyond the quasicubic approximation, we find a small anisotropy of the spin-orbit splittings. While for AlN Δ so does only weakly depend on the crystal structure, variations are found between zinc blende and wurtzite for GaN or InN.