Details

Autor(en) / Beteiligte

• Yuan, G D
• Ng, T W
• Zhou, Y B
• Wang, F
• Zhang, W J
• Tang, Y B
• Wang, H B
• Luo, L B
• Wang, P F
• Bello, I
• Lee, C S
• Lee, S T

Titel

p-type conductivity in silicon nanowires induced by heterojunction interface charge transfer

Ist Teil von

• Applied physics letters, 2010-10, Vol.97 (15), p.153126-153126-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2010

Link zum Volltext

Quelle

AIP - American Institute of Physics : Revues

Beschreibungen/Notizen

• p-type conductivity in intrinsic silicon nanowires (SiNWs) synthesized by an etching method was achieved via surface coating of MoO 3 and tetrafluoro-tetracyanoquinodimethane thin layers. Characterization of field-effect transistors fabricated from single SiNW revealed a decrease in resistivity by six orders of magnitude and an increase in hole concentration by eight orders of magnitude with respect to the original silicon wafers. The enhancement of p-type conduction was demonstrated to originate from the interface charge transfer between inorganic/inorganic and organic/inorganic heterojunctions and the enrichment of hole concentration in SiNW surfaces based on band energy alignment and x-ray photoelectron spectroscopic analysis.