Details

Autor(en) / Beteiligte

• Lim, Peng Huei
• Cai, Jingnan
• Ishikawa, Yasuhiko
• Wada, Kazumi

Titel

C-band electromodulation in silicon-germanium ring and linear devices

Ist Teil von

• Applied physics letters, 2010-09, Vol.97 (13), p.131115-131115-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2010

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We report C-band electromodulation in waveguide-integrated silicon-germanium (SiGe) ring and linear devices. With a 7 V peak-to-peak, 5 MHz sinusoidal input, a waveguide absorption change of 14.9   cm − 1 for the linear modulator, and 3.26   cm − 1 for the ring were calculated, corresponding to respective modulation depths of 30% and 0.7%. A 2.6 × 10 − 5 ring index change was also noted using a technique capable of resolving minute electrorefraction, even with simultaneous electroabsorption and background attenuation. Our results deliver a proof-of-concept for SiGe field-effect devices using optical interference, which may be suitable for high speed and low power optical switches.