Details

Autor(en) / Beteiligte

• Pashkin, Yu. A.
• Li, T. F.
• Pekola, J. P.
• Astafiev, O.
• Knyazev, D. A.
• Hoehne, F.
• Im, H.
• Nakamura, Y.
• Tsai, J. S.

Titel

Detection of mechanical resonance of a single-electron transistor by direct current

Ist Teil von

• Applied physics letters, 2010-06, Vol.96 (26)

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.