Details

Autor(en) / Beteiligte

• Shin, Byungha
• Weber, Justin R.
• Long, Rathnait D.
• Hurley, Paul K.
• Van de Walle, Chris G.
• McIntyre, Paul C.

Titel

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Ist Teil von

• Applied physics letters, 2010-04, Vol.96 (15), p.152908-152908-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2010

Link zum Volltext

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We report experimental and theoretical studies of defects producing fixed charge within Al 2 O 3 layers grown by atomic layer deposition (ALD) on In 0.53 Ga 0.47 As ( 001 ) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt / ALD-Al 2 O 3 / n-In 0.53 Ga 0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al 2 O 3 . We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al 2 O 3 .