Details

Autor(en) / Beteiligte

• Ji, Z.
• Zhang, J. F.
• Zhang, W.
• Groeseneken, G.
• Pantisano, L.
• De Gendt, S.
• Heyns, M. M.

Titel

An assessment of the mobility degradation induced by remote charge scattering

Ist Teil von

• Applied physics letters, 2009-12, Vol.95 (26), p.263502-263502-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2009

Quelle

American Institute of Physics

Beschreibungen/Notizen

• Carrier mobility reduces when the gate SiON becomes thinner than 2 nm or high- k layer is used. Agreement has not yet been reached on the level of reduction and on the underlying mechanism. Remote charge scattering has been proposed to be responsible for the mobility reduction and this work assesses its importance. By increasing charge density at 0.56-1 nm from the substrate interface to the order of 10 20   cm − 3 , it is found that both electron and hole mobility changes little.