Details

Autor(en) / Beteiligte

• Guo, W.
• Fu, L.
• Zhang, Y.
• Zhang, K.
• Liang, L. Y.
• Liu, Z. M.
• Cao, H. T.
• Pan, X. Q.

Titel

Microstructure, optical, and electrical properties of p -type SnO thin films

Ist Teil von

• Applied physics letters, 2010-01, Vol.96 (4), p.042113-042113-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• SnO thin films were fabricated by electron beam evaporation on (100) Si and c - and r -plane Al 2 O 3 substrates. The films grown at 25 ° C are nanocrystalline, while the films grown at 600 ° C are epitaxial on r -plane Al 2 O 3 and (001) textured on Si and c -plane Al 2 O 3 . The SnO films have an optical band gap of 2.82-2.97 eV and p -type conductivity, according to Hall measurements, with resistivities of 0.5 - 110   Ω cm , hole concentrations of 10 17 - 10 19   cm − 3 , and Hall mobilities of 0.1 - 2.6   cm 2 / Vs . The p -type conductivity, which appears to correlate with V Sn , can be enhanced via Y- and Sb-doping. Defect complexes of Sb Sn − 2 V Sn are suggested to be the acceptors in Sb-(or Y-) doped SnO films.