Details

Autor(en) / Beteiligte

• Colombo, C.
• Heiβ, M.
• Grätzel, M.
• Fontcuberta i Morral, A.

Titel

Gallium arsenide p - i - n radial structures for photovoltaic applications

Ist Teil von

• Applied physics letters, 2009-04, Vol.94 (17), p.173108-173108-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2009

Quelle

American Institute of Physics

Beschreibungen/Notizen

• Gallium arsenide p - i - n radial junctions were fabricated by molecular beam epitaxy. The current-voltage characteristics of single nanowires were measured in the dark and under various illumination conditions including 1.5 AM. The total efficiency was 4.5%. Spatially resolved and power dependent photocurrent measurements indicate that the p - i - n junction is homogeneous along the nanowire. Electroluminescence measurements show an emission peak at about 1.4 eV, further corroborating the good quality of the nanowire. These results constitute an important progress for the use of nanowires in photovoltaic applications.