Details

Autor(en) / Beteiligte

• Blokland, J. H.
• Bozkurt, M.
• Ulloa, J. M.
• Reuter, D.
• Wieck, A. D.
• Koenraad, P. M.
• Christianen, P. C. M.
• Maan, J. C.

Titel

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

Ist Teil von

• Applied physics letters, 2009-01, Vol.94 (2), p.023107-023107-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2009

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• We report a detailed analysis of the shape, size, and composition of self-assembled InAs quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) experiments. X-STM measurements on 13 individual quantum dots reveal an ellipsoidal dot shape with an average height of 8 nm and a diameter of 26 nm. Analysis of the outward relaxation and lattice constant profiles shows that the dots consist of an InGaAs alloy with a profound gradient in the indium concentration in both horizontal and vertical directions. These results are important to obtain a deeper understanding of the relationship between the structural and electronic properties of semiconductor quantum dots.