Details

Autor(en) / Beteiligte

• Lim, Wantae
• Douglas, E. A.
• Kim, S.-H.
• Norton, D. P.
• Pearton, S. J.
• Ren, F.
• Shen, H.
• Chang, W. H.

Titel

Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape

Ist Teil von

• Applied physics letters, 2008-12, Vol.93 (25)

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Amorphous (α-)InGaZnO4 thin film transistors (TFTs) were fabricated on polyimide clean-room tape at low temperature (<100 °C). The α-InGaZnO4 films with an n-type carrier concentration of ∼1016 cm−3 were deposited by rf-magnetron sputtering in a mixed ambient of Ar/O2. The bottom-gate-type TFTs showed good saturation mobility (∼5.3 cm2 V−1 s−1), drain current on-to-off ratio of approximately 105, threshold voltage of 1.1 V, and subthreshold gate-voltage swing of 0.55 V decade−1. These results were comparable to those of the same oxide TFTs that we have fabricated on either glass or polyethylene terephthalate substrates. The results demonstrate that even polyimide clean-room tape can be an appropriate substrate for inexpensive-flexible-adhesive-transparent electronic devices.