Details

Autor(en) / Beteiligte

• Paladugu, Mohanchand
• Zou, Jin
• Guo, Ya-Nan
• Zhang, Xin
• Kim, Yong
• Joyce, Hannah J.
• Gao, Qiang
• Tan, H. Hoe
• Jagadish, C.

Titel

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures

Ist Teil von

• Applied physics letters, 2008-09, Vol.93 (10), p.101911-101911-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2008

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The structural and compositional characteristics of heterointerfaces of Au-catalyzed GaAs/InAs and InAs/GaAs axial nanowire heterostructures were comprehensively investigated by transmission electron microscopy. It has been found that the GaAs/InAs interface is not sharp and contains an InGaAs transition segment, and in contrast, the InAs/GaAs interface is atomically sharp. This difference in the nature of heterointerfaces can be attributed to the difference in the affinity of the group III elements with the catalyst material.