Details

Autor(en) / Beteiligte

• Andres, Stefan
• Pettenkofer, Christian
• Speck, Florian
• Seyller, Thomas

Titel

Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)

Ist Teil von

• Journal of applied physics, 2008-05, Vol.103 (10)

Erscheinungsjahr

2008

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Thin ZnO films were grown on hydrogen passivated 6H-SiC(0001) substrates by metal organic molecular beam epitaxy. The initial growth as well as the electronic properties of the growing interface were monitored by low electron diffraction and photoelectron spectroscopy (PES). From the PES intensities of the substrate and ZnO film a layered Frank-van-der-Merwe-like growth mode could be observed within the first 10nm. The ZnO films grow preferentially in (0001) direction and show a pronounced facetting in the {101¯2} direction. The experimentally determined band alignment reveals band offsets of ΔEVBM≈1.6eV and ΔECBM≈1.2eV between the valence and conduction bands, respectively. With growing ZnO thickness a band bending of about −0.51eV is observed in the SiC substrate.