Details

Autor(en) / Beteiligte

• Archer, Melissa J.
• Law, Daniel C.
• Mesropian, Shoghig
• Haddad, Moran
• Fetzer, Christopher M.
• Ackerman, Arthur C.
• Ladous, Corinne
• King, Richard R.
• Atwater, Harry A.

Titel

Ga In P ∕ Ga As dual junction solar cells on Ge ∕ Si epitaxial templates

Ist Teil von

• Applied physics letters, 2008-03, Vol.92 (10), p.103503-103503-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Large area, crack-free Ga In P ∕ Ga As double junction solar cells were grown by metal organic chemical vapor deposition on Ge ∕ Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.