Details

Autor(en) / Beteiligte

• Xuan, Y.
• Wu, Y. Q.
• Shen, T.
• Qi, M.
• Capano, M. A.
• Cooper, J. A.
• Ye, P. D.

Titel

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Ist Teil von

• Applied physics letters, 2008-01, Vol.92 (1), p.013101-013101-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 10 8 cm ∕ s and a room-temperature mobility of > 15 000 cm 2 ∕ V s . How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al 2 O 3 and Hf O 2 films on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD). To our surprise, large numbers of Al 2 O 3 and Hf O 2 nanoribbons, with dimensions of 5 - 200 nm in width and > 50 μ m in length, are observed on HOPG surfaces at growth temperature between 200 and 250 ° C . This is due to the large numbers of step edges of graphene on HOPG surfaces, which serve as nucleation sites for the ALD process. These Al 2 O 3 and Hf O 2 nanoribbons can be used as hard masks to generate graphene nanoribbons or as top-gate dielectrics for graphene devices. This methodology could be extended to synthesize insulating, semiconducting, and metallic nanostructures and their combinations.