Details

Autor(en) / Beteiligte

• Schubert, Martin F.
• Chhajed, Sameer
• Kim, Jong Kyu
• Schubert, E. Fred
• Koleske, Daniel D.
• Crawford, Mary H.
• Lee, Stephen R.
• Fischer, Arthur J.
• Thaler, Gerald
• Banas, Michael A.

Titel

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Ist Teil von

• Applied physics letters, 2007-12, Vol.91 (23)

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.