Details

Autor(en) / Beteiligte

• Kobayashi, Atsushi
• Kawano, Satoshi
• Ueno, Kohei
• Ohta, Jitsuo
• Fujioka, Hiroshi
• Amanai, Hidetaka
• Nagao, Satoru
• Horie, Hideyoshi

Titel

Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

Ist Teil von

• Applied physics letters, 2007-11, Vol.91 (19), p.191905-191905-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2007

Link zum Volltext

Quelle

AIP Scitation Journals Complete

Beschreibungen/Notizen

• Nonpolar a -plane GaN films were grown on nearly lattice-matched a -plane ZnO substrates by pulsed laser deposition. Growth of GaN on a -plane ZnO at conventional growth temperatures (around 700 ° C ) resulted in the formation of polycrystalline materials, probably due to the interface reactions between GaN and ZnO. However, single crystalline a -plane GaN with an atomically flat surface can be grown on ZnO at room temperature in the layer-by-layer mode. X-ray diffraction and photoluminescence measurements revealed that high-quality a -plane GaN films can also be grown at elevated substrate temperatures (up to 700 ° C ) by using a RT a -plane GaN film as a buffer layer.