Details

Autor(en) / Beteiligte

• Koyama, T.
• Fouda, A. N.
• Shibata, N.
• Chichibu, S. F.

Titel

Effects of the high-temperature-annealed self-buffer layer on the improved properties of ZnO epilayers grown by helicon-wave-excited-plasma sputtering epitaxy on a -plane sapphire substrates

Ist Teil von

• Journal of applied physics, 2007-10, Vol.102 (7), p.073505-073505-4

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The use of the high-temperature-annealed self-buffer layer (HITAB) enabled to observe free A -and B -exciton emissions at 9 K from ZnO heteroepitaxial films grown by the sputtering epitaxy method using a helicon-wave-excited plasma on uniaxially nearly lattice-matched ( 11 2 ¯ 0 ) Al 2 O 3 substrates. The result was correlated with a twofold decrease in the densities of threading dislocations having both the screw and edge components, according to the dislocation concealing in ZnO HITAB due to lateral mass transport of low-temperature deposited ZnO nanocrystalline grains during high temperature annealing.