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Ultraviolet semiconductor laser diodes on bulk AlN
Ist Teil von
Journal of applied physics, 2007-06, Vol.101 (12), p.123103-123103-5
Ort / Verlag
American Institute of Physics
Erscheinungsjahr
2007
Quelle
American Institute of Physics
Beschreibungen/Notizen
Current-injection ultraviolet lasers are demonstrated on low-dislocation-density bulk AlN substrates. The AlGaInN heterostructures were grown by metalorganic chemical vapor deposition. Requisite smooth surface morphologies were obtained by growing on
near-
c
-plane
AlN substrates, with a nominal off-axis orientation of less than 0.5°. Lasing was obtained from gain-guided laser diodes with uncoated facets and cavity lengths ranging from
200
to
1500
μ
m
. Threshold current densities as low as
13
kA
/
cm
2
were achieved for laser emission wavelengths as short as 368 nm, under pulsed operation. The maximum light output power was near 300 mW with a differential quantum efficiency of 6.7%. This (first) demonstration of nitride laser diodes on bulk AlN substrates suggests the feasibility of using such substrates to realize nitride laser diodes emitting from the near to deep ultraviolet spectral regions.
Sprache
Englisch
Identifikatoren
ISSN: 0021-8979
eISSN: 1089-7550
DOI: 10.1063/1.2747546
Titel-ID: cdi_crossref_primary_10_1063_1_2747546
Format
–
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