Details

Autor(en) / Beteiligte

• Zhao, Jun-Liang
• Li, Xiao-Min
• Krtschil, André
• Krost, Alois
• Yu, Wei-Dong
• Zhang, Yi-Wen
• Gu, Yan-Fei
• Gao, Xiang-Dong

Titel

Study on anomalous high p -type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

Ist Teil von

• Applied physics letters, 2007-02, Vol.90 (6), p.062118-062118-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2007

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• N-In codoped ZnO films were prepared by ultrasonic spray pyrolysis. Hall-effect measurements indicate that the films on silicon exhibit anomalous high p -type conductivity, while films on insulating substrates show n -type conductivity. Scanning capacitance microscopy was employed to analyze the microconductivity type of ZnO films. The grains of ZnO film on silicon show n -type conductivity and no significant p -type grains were found. The authors further investigated the microstructure of ZnO film and the band structure of the Zn O ∕ Si interface and propose a model of an interface state induced two-dimensional hole gas as the origin of the anomalous high p -type behavior.