Details

Autor(en) / Beteiligte

• Lee, Yuan-Jen
• Hung, Chien-Chung
• Wang, Ding-Yeong
• Yen, Cheng-Tyng
• Chen, Wei-Chuan
• Yang, Shan-Yi
• Shen, Kuei-Hung
• Wang, Yung-Hung
• Chen, Yung-Hsiang
• Kao, Ming-Jer
• Tsai, Ming-Jinn

Titel

Improvement switching characteristics of toggle magnetic random access memory with dual polarity write pulse scheme

Ist Teil von

• Applied physics letters, 2007-01, Vol.90 (3), p.032503-032503-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2007

Quelle

American Institute of Physics

Beschreibungen/Notizen

• The writing probability of toggle magnetic random access memory (MRAM) at built-in bias field is studied by micromagnetic simulation and a dual polarity write pulse scheme has been proposed to enhance the toggle probability at low writing field. The critical writing field can be reduced to 19 Oe at strong built-in bias field from Co Fe ( 1.0 nm ) ∕ Co Fe B ( 2.0 nm ) ∕ Ru ∕ Co Fe ( 5.0 nm ) pinned layer structure. From the simulation and experimental results, it is proven that the toggle MRAM can be operated at lower writing field by dual polarity write pulse scheme.