Details

Autor(en) / Beteiligte

• Galli, M
• Gerace, D
• Politi, A
• Liscidini, M
• Patrini, M
• Andreani, L C
• Canino, A
• Miritello, M
• Savio, R Lo
• Irrera, A
• Priolo, F

Titel

Direct evidence of light confinement and emission enhancement in active silicon-on-insulator slot waveguides

Ist Teil von

• Applied physics letters, 2006-12, Vol.89 (24), p.241114-241114-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2006

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The authors experimentally demonstrate strong light confinement and enhancement of emission at 1.54 μ m in planar silicon-on-insulator waveguides containing a thin layer (slot) of Si O 2 with Er 3 + doped Si nanoclusters. Angle-resolved attenuated total reflectance is used to excite the slab guided modes, giving a direct evidence of the strong confinement of the electric field in the low-index active material for the fundamental transverse-magnetic mode. By measuring the guided photoluminescence from the cleaved-edge of the sample, the authors observe a more than fivefold enhancement of emission for the transverse-magnetic mode over the transverse-electric one. These results show that Si-based slot waveguides could be important as starting templates for the realization of Si-compatible active optical devices.