Details

Autor(en) / Beteiligte

• Graz, Ingrid
• Kaltenbrunner, Martin
• Keplinger, Christoph
• Schwödiauer, Reinhard
• Bauer, Siegfried
• Lacour, Stéphanie P
• Wagner, Sigurd

Titel

Flexible ferroelectret field-effect transistor for large-area sensor skins and microphones

Ist Teil von

• Applied physics letters, 2006-08, Vol.89 (7), p.073501-073501-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2006

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Ferroelectrets generate an electric field large enough to modulate the conductance of the source-drain channel of a thin-film field-effect transistor. Integrating a ferroelectret with a thin-film transistor produces a ferroelectret field-effect transistor. The authors made such transistors by laminating cellular polypropylene films and amorphous silicon thin-film transistors on polyimide substrates. They show that these ferrroelectret field-effect transistors respond in a static capacitive or dynamic piezoelectric mode. A touch sensor, a pressure-activated switch, and a microphone are demonstrated. The structure can be scaled up to large-area flexible transducer arrays, such as roll-up steerable compliant sensor skin.