Details

Autor(en) / Beteiligte

• Tyschenko, I. E.
• Zhuravlev, K. S.
• Cherkov, A. G.
• Popov, V. P.
• Misiuk, A.
• Yankov, R. A.

Titel

Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure

Ist Teil von

• Applied physics letters, 2006-07, Vol.89 (1), p.013106-013106-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2006

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Characteristic features of the visible photoluminescence (PL) spectra were studied in silicon-on-insulator (SOI) wafers following high-dose ( 3 × 10 17 cm − 2 ) ion implantation of hydrogen and annealing at high hydrostatic pressures. The PL behavior of the SOI material was compared with that of hydrogen-implanted bulk Si. Annealing at a pressure above 6 kbars produced a wavelength-selective increase ( ∼ 37 times) in the intensity of the visible PL from the implanted SOI structures. The results are explained in terms of the effect of an optical resonant cavity formed between the air/SOI and the Si ∕ Si O 2 interfaces as a result of the high-pressure annealing.