Details

Autor(en) / Beteiligte

• Zeng, Y. J.
• Ye, Z. Z.
• Xu, W. Z.
• Lu, J. G.
• He, H. P.
• Zhu, L. P.
• Zhao, B. H.
• Che, Y.
• Zhang, S. B.

Titel

p -type behavior in nominally undoped ZnO thin films by oxygen plasma growth

Ist Teil von

• Applied physics letters, 2006-06, Vol.88 (26), p.262103-262103-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2006

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We report on intrinsic p -type ZnO thin films by plasma-assisted metal-organic chemical vapor deposition. The optimal results give a resistivity of 12.7 Ω cm , a Hall mobility of 2.6 cm 2 ∕ V s , and a hole concentration of 1.88 × 10 17 cm − 3 . The oxygen concentration is increased in the intrinsic p -type ZnO, compared with the n -type layer. Two acceptor states, with the energy levels located at 160 and 270 meV above the valence band maximum, are identified by temperature-dependent photoluminescence. The origin of intrinsic p -type behavior has been ascribed to the formation of zinc vacancy and some complex acceptor center.