Details

Autor(en) / Beteiligte

• Hung, Chien-Chung
• Lee, Yuan-Jen
• Kao, Ming-Jer
• Wang, Yung-Hung
• Huang, Rei-Fu
• Chen, Wei-Chuan
• Chen, Young-Shying
• Shen, Kuei-Hung
• Tsai, Ming-Jinn
• Lin, Wen-Chin
• Tang, Denny Duan-Lee
• Chao, Shiuh

Titel

Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Ist Teil von

• Applied physics letters, 2006-03, Vol.88 (11), p.112501-112501-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2006

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this work, a writing scheme with preceding negative pulse wave form for toggle magnetic random access memory (MRAM) is proposed to enhance the switching yield and enable a low current switching. The failure mechanism of toggle switching is studied by micromagnetic analysis. As a result of broadened operation window and reduced switching current, the scalability of MRAM is feasible with the robust toggle operation.