Details

Autor(en) / Beteiligte

• Suomalainen, S
• Vainionpää, A
• Tengvall, O
• Hakulinen, T
• Karirinne, S
• Guina, M
• Okhotnikov, O G
• Euser, T G
• Vos, W L

Titel

Long-wavelength fast semiconductor saturable absorber mirrors using metamorphic growth on GaAs substrates

Ist Teil von

• Applied physics letters, 2005-09, Vol.87 (12), p.121106-121106-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2005

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Metamorphic growth of InP on GaAs has been used to decrease the absorption recovery time of 1.55 μ m semiconductor saturable absorber mirrors. We show that the recovery time can be reliably controlled by changing the thickness of an InP "lattice reformation layer" grown between the GaAs-based distributed Bragg reflector and the active region. Semiconductor saturable absorber mirrors with a thickness of the InP reformation layer around 200 nm or smaller exhibit a recovery time short enough to reliably mode-lock fiber lasers.