Details

Autor(en) / Beteiligte

• Wang, Yung-Hung
• Chen, Wei-Chuan
• Chen, Young-Shying
• Shen, Kuei-Hung
• Lee, Yuan-Jen
• Hung, Chien-Chung
• Chen, Chi-Ming
• Hsu, Hong-Hui
• Chen, W. S.
• Liou, Dau-Chi
• Kao, Ming-Jer
• Wang, Lien-Chang
• Lai, Chih-Huang
• Lin, Wen-Chin
• Tang, D. D.
• Tsai, Ming-Jinn

Titel

The switching behaviors of submicron magnetic tunnel junctions with synthetic antiferromagnetic free layers

Ist Teil von

• Journal of applied physics, 2005-05, Vol.97 (10), p.10C923-10C923-3

Ort / Verlag

American Institute of Physics

Erscheinungsjahr

2005

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The switching behaviors in elliptic shaped (aspect ratio = 2 ) submicron magnetic tunnel junctions using CoFeB single free layer and Co Fe B ∕ Ru ∕ Co Fe B synthetic antiferromagnetic (SAF) free layers are studied. It is found that under considerable stray fields originating from pinned layers, junctions with single free layer show complex switching behaviors with larger Hc variations. In contrast, junctions with SAF free layers exhibit kink-free R - H loops and less Hc variations. The Hc of junctions with SAF free layers is less dependent on the junction size than that with a single free layer. Furthermore, for junctions smaller than a critical size the SAF free layers have a smaller Hc than single free layers.