Details

Autor(en) / Beteiligte

• Juršènas, S.
• Kuokštis, E.
• Miasojedovas, S.
• Kurilčik, G.
• Žukauskas, A.
• Chen, C. Q.
• Yang, J. W.
• Adivarahan, V.
• Asif Khan, M.

Titel

Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth

Ist Teil von

• Applied physics letters, 2004-08, Vol.85 (5), p.771-773

Erscheinungsjahr

2004

Quelle

美国小型学会期刊集（AIP Scitation平台）

Beschreibungen/Notizen

• Carrier recombination dynamics in epitaxial a-plane GaN and fully coalesced epitaxial laterally overgrown (ELOG) a-plane GaN films has been studied by means of time-resolved photoluminescence under high photoexcitation. The results were compared with conventional c-plane GaN films grown under similar conditions. In a-plane GaN epilayers, the total efficiency of electron-hole plasma spontaneous luminescence decreases 20 times, whereas the luminescence decay time reduces from τLU=42 to τLU⩽10ps in comparison with c-plane GaN films. Meanwhile, an essential increase in total emission efficiency (by more than two orders of magnitude) and an increase of the decay time up to τLU=430ps have been observed for an ELOG a-plane sample in comparison with a-plane GaN films. This confirms a significant reduction of the nonradiative recombination rate for nonequilibrium carriers. Assuming a saturation of the nonradiative deep-level transitions, the room-temperature free-carrier lifetime of τ=910ps for ELOG a-plane GaN sample was obtained, which indicates on an excellent quality of the a-plane ELOG GaN films.