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Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron cosputtering. These films are single phase, have a strong (110) texture, and a saturation magnetization of 4.95μB/formula unit at 10 K. Films grown at the highest substrate temperature of 715 K showed the lowest resistivity (47 μΩ cm at 4.2 K) and the lowest coercivity (18 Oe). The spin polarization of the transport current was found to be of the order of 54% as determined by point contact Andreev reflection spectroscopy. A decrease in saturation magnetization with a decrease in film thickness and different transport behavior in thinner films indicate graded disorder in these films grown on nonlattice matched substrates.
Sprache
Englisch
Identifikatoren
ISSN: 0003-6951
eISSN: 1077-3118
DOI: 10.1063/1.1690868
Titel-ID: cdi_crossref_primary_10_1063_1_1690868
Format
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