Details

Autor(en) / Beteiligte

• Qiu, Z. J.
• Gui, Y. S.
• Guo, S. L.
• Dai, N.
• Chu, J. H.
• Zhang, X. X.
• Zeng, Y. P.

Titel

Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes

Ist Teil von

• Applied physics letters, 2004-03, Vol.84 (11), p.1961-1963

Erscheinungsjahr

2004

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Current-voltage (I–V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I–V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well.