Details

Autor(en) / Beteiligte

• Watts, S. M.
• Nakajima, K.
• van Dijken, S.
• Coey, J. M. D.

Titel

Transport characteristics of magnetite thin films grown onto GaAs substrates

Ist Teil von

• Journal of applied physics, 2004-06, Vol.95 (11), p.7465-7467

Erscheinungsjahr

2004

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• Magnetite thin films with a preferred (111) orientation have been deposited by reactive dc magnetron sputtering from a pure Fe target onto (100) GaAs substrates at 400 °C. The films show a clear Verwey transition in both the magnetization and sheet resistance as functions of temperature. For films deposited onto semiconducting n-type GaAs substrates, we have obtained asymmetric current–voltage (I–V) characteristics with a Schottky diodelike behavior in forward bias. Activation energy plots of the I–V data as a function of temperature indicate a barrier height of 0.3–0.4 eV. This does not take into account the contribution from tunneling across the narrow depletion layer in these junctions, so should be considered a lower bound to the actual Schottky barrier height. Our work points to the potential integration of half-metallic magnetite with GaAs-based heterostructures for spin-electronic devices.