Details

Autor(en) / Beteiligte

• Nagai, Takehiko
• Inagaki, Takeshi J.
• Kanemitsu, Yoshihiko

Titel

Band-gap renormalization in highly excited GaN

Ist Teil von

• Applied physics letters, 2004-02, Vol.84 (8), p.1284-1286

Erscheinungsjahr

2004

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We have studied the band-gap renormalization in highly excited GaN thin films by means of photoluminescence (PL) spectral measurements from 6 to 300 K. The renormalized band-gap energy is determined from the low-energy edge of the broad PL band due to the high-density electron and hole (e–h) plasmas. The reduction of the band-gap energy depends on the density of e–h plasmas, but is independent of temperature. The renormalized band-gap energy is calculated using two theoretical models. Our results suggest that the e–h pair correlation plays an essential role in highly excited GaN.