Details

Autor(en) / Beteiligte

• Moon, Seung Eon
• Kim, Eun-Kyoung
• Kwak, Min-Hwan
• Ryu, Han-Cheol
• Kim, Young-Tae
• Kang, Kwang-Yong
• Lee, Su-Jae
• Kim, Won-Jeong

Titel

Orientation dependent microwave dielectric properties of ferroelectric Ba1−xSrxTiO3 thin films

Ist Teil von

• Applied physics letters, 2003-09, Vol.83 (11), p.2166-2168

Erscheinungsjahr

2003

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The effects of anisotropic dielectric properties of ferroelectric Ba1−xSrxTiO3 (BST) films on the characteristics of the interdigital (IDT) capacitors have been studied in microwave regions at room temperature. Ferroelectric BST films with (001), (011), and (111) orientation were epitaxially grown on (001), (011), and (111) MgO substrates, respectively, by the pulsed laser deposition method. The microwave properties of orientation engineered BST films were investigated using interdigital capacitors. The calculated dielectric constant tunability with 40 V dc bias variation and the calculated dielectric quality factor values for IDT capacitors based on (001), (011), and (111) oriented BST films at 9 GHz with no dc bias were about 47%, 55%, 43%, and 12, 14, 21, respectively.