Details

Autor(en) / Beteiligte

• Lai, K. T.
• Missous, M.
• Gupta, R.
• Haywood, S. K.

Titel

Intersubband absorption in strain-compensated InAlAs/AlAs/InxGa(1−x)As (x∼0.8) quantum wells grown on InP

Ist Teil von

• Journal of applied physics, 2003-05, Vol.93 (10), p.6065-6067

Erscheinungsjahr

2003

Link zum Volltext

Quelle

American Institute of Physics

Beschreibungen/Notizen

• We report the observation of strong room temperature absorption peaks between 4 and 7 μm in strain-compensated In0.84Ga0.16As/AlAs/In0.52Al0.48As double-barrier multiple-quantum-well structures. The observed peaks at 4.4, 5.0, and 7.2 μm are attributed to E3→E4, E2→E3, and E1→E2 Γ-Γ electron intersubband transitions, respectively, the transition energies are in good agreement with our theoretical model. The large conduction band offset and low effective mass in this material system, as well as the possibility for strain compensation between wells and barriers, make this a promising route to efficient room temperature quantum well infrared photodetectors.