Details

Autor(en) / Beteiligte

• Zhang, J. P.
• Wang, H. M.
• Gaevski, M. E.
• Chen, C. Q.
• Fareed, Q.
• Yang, J. W.
• Simin, G.
• Khan, M. Asif

Titel

Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

Ist Teil von

• Applied physics letters, 2002-05, Vol.80 (19), p.3542-3544

Erscheinungsjahr

2002

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report on an AlN/AlGaN superlattice approach to grow high-Al-content thick n+-AlGaN layers over c-plane sapphire substrates. Insertion of a set of AlN/AlGaN superlattices is shown to significantly reduce the biaxial tensile strain, thereby resulting in 3-μm-thick, crack-free Al0.2Ga0.8N layers. These high-quality, low-sheet-resistive layers are of key importance to avoid current crowding in quaternary AlInGaN multiple-quantum-well deep-ultraviolet light-emitting diodes over sapphire substrates.