Details

Autor(en) / Beteiligte

• Lin, Yen-Sheng
• Ma, Kung-Jen
• Hsu, Cheng
• Chung, Yi-Yin
• Liu, Chih-Wen
• Feng, Shih-Wei
• Cheng, Yung-Chen
• Yang, C. C.
• Mao, Ming-Hua
• Chuang, Hui-Wen
• Kuo, Cheng-Ta
• Tsang, Jian-Shihn
• Weirich, Thomas E.

Titel

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Ist Teil von

• Applied physics letters, 2002-04, Vol.80 (14), p.2571-2573

Erscheinungsjahr

2002

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Postgrowth thermal annealing of an InGaN/GaN quantum-well sample with a medium level of nominal indium content (19%) was conducted. From the analyses of high-resolution transmission electron microscopy and energy filter transmission electron microscopy, it was found that thermal annealing at 900 °C led to a quasiregular quantum-dot-like structure. However, such a structure was destroyed when the annealing temperature was raised to 950 °C. Temperature-dependent photoluminescence (PL) measurements showed quite consistent results. Blueshift of the PL peak position and narrowing of the PL spectral width after thermal annealing were observed.