Details

Autor(en) / Beteiligte

• Orchowski, A.
• Rau, W.-D.
• Rücker, H.
• Heinemann, B.
• Schwander, P.
• Tillack, B.
• Ourmazd, A.

Titel

Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

Ist Teil von

• Applied physics letters, 2002-04, Vol.80 (14), p.2556-2558

Erscheinungsjahr

2002

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present microscopic maps of the electrostatic potential in Si/SiGe/Si patterned structures of the type used in heterostructure bipolar transistors. By obtaining such maps before and after anneals typically used in device processing, we directly reveal the “vertical” and “lateral” redistribution of boron during device fabrication. Such data can be compared with the results of process simulation to extract the fundamental parameters for dopant diffusion in complex device structures.