Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)
Ist Teil von
Journal of applied physics, 2002-04, Vol.91 (7), p.4353-4363
Erscheinungsjahr
2002
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The interfacial chemistry of the high-k dielectric HfO2 has been investigated on nitrided and un-nitrided Si(100) using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The samples are prepared by sputter depositing Hf metal and subsequently oxidizing it. A 600 °C densification anneal is critical to completing Hf oxidation. These spectroscopic data complement electrical testing of metal oxide semiconductor capacitors fabricated with ∼50 Å HfO2 on nitrided and un-nitrided Si(100). Capacitors with interfacial nitride show reduced leakage current by a factor of 100 at a −1 V bias. Concurrently, interfacial nitride increased capacitance 12% at saturation. XPS shows that an interfacial layer composed of nonstoichiometric hafnium silicate (HfSixOy), forms at both the HfO2/Si and HfO2/SiNx interfaces. Differences in the Si 2p and O 1s XP spectra suggest more silicate forms at the un-nitrided interface. HfO2 films on un-nitrided Si show more O 1s and Si 2p photoemission intensity characteristic of HfSixOy. SIMS depth profiles through the buried interface are consistent with interfacial silicate formation, as shown by a HfSiO+ ion signal, that is sandwiched between HfO2 and SiNx. SiNx is suggested to minimize interfacial HfSixOy formation by limiting the amount of Si available to interact with the HfO2 layer.
Sprache
Englisch
Identifikatoren
ISSN: 0021-8979
eISSN: 1089-7550
DOI: 10.1063/1.1455155
Titel-ID: cdi_crossref_primary_10_1063_1_1455155
Format
–
Weiterführende Literatur
Empfehlungen zum selben Thema automatisch vorgeschlagen von bX