Details

Autor(en) / Beteiligte

• Beard, Matthew C.
• Turner, Gordon M.
• Schmuttenmaer, Charles A.

Titel

Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy

Ist Teil von

• Journal of applied physics, 2001-12, Vol.90 (12), p.5915-5923

Erscheinungsjahr

2001

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The transient photoconductivity in a 1 μm layer of low temperature grown GaAs (LT-GaAs) on a GaAs substrate was measured using time-resolved terahertz spectroscopy. When photoexcitation occurs at 400 nm we find a time-dependent mobility that increases from 400±100 to 1100±100 cm2 V−1 s−1 with a time constant of 2 ps. Photoexcitation at 800 nm produces a time-independent mobility of 3000±500 cm2 V−1 s−1. We determine the carrier lifetime in LT-GaAs to be 1.1 ± 0.1 ps.