Details

Autor(en) / Beteiligte

• Garcia, César Pascual
• De Nardis, Andrea
• Pellegrini, Vittorio
• Jancu, Jean Marc
• Beltram, Fabio
• Müeller, Bernhard H.
• Sorba, Lucia
• Franciosi, Alfonso

Titel

1.26 μm intersubband transitions in In0.3Ga0.7As/AlAs quantum wells

Ist Teil von

• Applied physics letters, 2000-12, Vol.77 (23), p.3767-3769

Erscheinungsjahr

2000

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We observed room-temperature intersubband transitions at 1.26 μm in n-doped type-II In0.3Ga0.7As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X- valley into the well ground state.