Details

Autor(en) / Beteiligte

• Zhu, T. G.
• Lambert, D. J. H.
• Shelton, B. S.
• Wong, M. M.
• Chowdhury, U.
• Dupuis, R. D.

Titel

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Ist Teil von

• Applied physics letters, 2000-10, Vol.77 (18), p.2918-2920

Erscheinungsjahr

2000

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have fabricated and investigated high-voltage GaN vertical Schottky-barrier rectifiers grown by metalorganic chemical vapor deposition. A mesageometry Schottky-barrier rectifier having a 5-μm-thick i region, and processed using reactive-ion etching, exhibited a reverse breakdown voltage of −450 V (at 10 mA/cm2) and an on-resistance of 23 mΩ cm2. For comparison, we have also applied wet chemical etching for the fabrication of mesageometry Schottky-barrier rectifiers. The 2-μm-thick i-region GaN mesa-Schottky rectifiers showed a breakdown voltage of −310 and −280 V for wet-etched and dry-etched devices, respectively, and an on-resistance of 8.2 and 6.4 mΩ cm2, respectively. These results indicate that the performance of the wet-etched rectifiers is comparable to or better than that of comparable dry-etched devices.