Details

Autor(en) / Beteiligte

• Koh, Joohyun
• Ferlauto, A. S.
• Rovira, P. I.
• Wronski, C. R.
• Collins, R. W.

Titel

Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane

Ist Teil von

• Applied physics letters, 1999-10, Vol.75 (15), p.2286-2288

Erscheinungsjahr

1999

Quelle

American Institute of Physics

Beschreibungen/Notizen

• Real-time optical studies have been applied to develop phase diagrams that characterize plasma-enhanced chemical vapor deposition (PECVD) of silicon thin films at low temperature (200 °C). The deposition phase diagrams describe regimes over which predominantly amorphous and microcrystalline Si phases are obtained as a function of the accumulated thickness and the hydrogen-to-silane gas flow ratio R=[H2]/[SiH4] in the PECVD process. The diagrams for different substrates provide insights into optimization of amorphous Si materials and solar cells.