Details

Autor(en) / Beteiligte

• Siethoff, Hans
• Brion, Hans Georg
• Schröter, Wolfgang

Titel

A regime of the yield point of silicon at high temperatures

Ist Teil von

• Applied physics letters, 1999-08, Vol.75 (9), p.1234-1236

Erscheinungsjahr

1999

Link zum Volltext

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• We present measurements of the lower yield point of undoped floating-zone silicon at temperatures between 800 and 1300 °C. The knowledge of the defect structure in this temperature range is of considerable importance for the numerical simulation of dislocation generation in various solar silicon materials. Above about 1050 °C, we find marked deviations from the well-known low-temperature behavior, thus establishing a further deformation regime. It is characterized by an activation energy of 4.1 eV. Comparison to preliminary work indicates that this effect depends on the as-grown dislocation density, but not on the ambient during deformation. We tentatively assume that it may reflect the change in the mechanism of self-diffusion typical for silicon at high temperatures.