Details

Autor(en) / Beteiligte

• Hu, J.
• Xu, X. G.
• Stotz, J. A. H.
• Watkins, S. P.
• Curzon, A. E.
• Thewalt, M. L. W.
• Matine, N.
• Bolognesi, C. R.

Titel

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Ist Teil von

• Applied physics letters, 1998-11, Vol.73 (19), p.2799-2801

Erscheinungsjahr

1998

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The optical properties of lattice-matched GaAsSb/InGaAs/InP heterostructures with a varying InGaAs layer thickness (0–900 Å) were investigated. These structures display strong low temperature type II luminescence, the energy of which varies with the InGaAs layer thickness and ranges from 0.453 to 0.63 eV. The type II luminescence was used to determine directly and accurately the conduction band offset of these structures. The values obtained herein are 0.36 and 0.18 eV at 4.2 K for the GaAsSb/InGaAs and GaAsSb/InP heterojunctions, respectively, with the GaAsSb conduction band higher in energy.